Magnetic Susceptibility of Germanium
1957; American Institute of Physics; Volume: 108; Issue: 3 Linguagem: Inglês
10.1103/physrev.108.683
ISSN1536-6065
Autores Tópico(s)Semiconductor materials and interfaces
ResumoThe magnetic susceptibility of highly doped germanium has been measured between 300\ifmmode^\circ\else\textdegree\fi{}K and 1.3\ifmmode^\circ\else\textdegree\fi{}K. The contribution of the carriers to the susceptibility has been derived from the data. Most of the measurements concern electrons occupying unbound states in the conduction band. The observed conduction-electron susceptibility has been compared with theoretical estimates based on the effective-mass values given by cyclotron-resonance experiments. Our results support a 4-ellipsoid model of $n$-Ge. No appreciable change in the effective masses is observed between room temperature and 1.3\ifmmode^\circ\else\textdegree\fi{}K. We find no evidence for any substantial change in the curvature of the conduction band for energies up to 0.08 ev above the band minimum. This finding contradicts certain conclusions of Stevens et al. An explanation for the disagreement is proposed.Measurements have been made of the spin susceptibility of quasi-bound states of electrons and holes in germanium at a carrier density near 6\ifmmode\times\else\texttimes\fi{}${10}^{16}$/cc. In each case, the spin susceptibility was found to be almost independent of temperature. We conclude that there is strong exchange coupling between neighboring impurity centers at this concentration.The susceptibility of high-purity germanium has been measured. It is found to be independent of temperature below 60\ifmmode^\circ\else\textdegree\fi{}K.
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