Liquid phase epitaxial growth of CdTe in the CdTe-CdCl2 system
1978; Elsevier BV; Volume: 43; Issue: 1 Linguagem: Inglês
10.1016/0022-0248(78)90363-9
ISSN1873-5002
AutoresJunji Saraie, Masahiko Kitagawa, Masahiro Ishida, Tetsuro Tanaka,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoAbstract CdTe layers with mirror-like surfaces have been obtained by liquid phase epitaxial technique on CdTe substrates. CdCl 2 was used as a solvent. Growth temperature was as low as 550–650°C. Dependence of the growth rate on the substrate orientation and the growth temperature was studied.
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