Portal de Periódicos da CAPES

Hydrogenating silicon dioxide in an electron cyclotron plasma

1993; American Institute of Physics; Volume: 63; Issue: 25 Linguagem: Inglês

10.1063/1.110134

1520-8842

M. Delfino, W. Tsai, G. J. Reynolds, M. E. Day,

Diamond and Carbon-based Materials Research

The hydrogenating effect of a low-temperature, electron cyclotron resonance excited H2 plasma on the surface chemistry of thermal SiO2 films is analyzed in situ by x-ray photoemission spectroscopy and static secondary ion mass spectrometry. Hydrogenation with this nominal 10 eV proton flux results in Si-(O4), H-Si-(O3), (H2)-Si-(O2), (H2)-Si-O, and H-Si-(Si3) bonding states to the complete exclusion of Si—OH bond formation. A simple thermodynamic argument accounts for the exclusivity of Si—H bonds terminating the outermost (O3)-Si-O-Si-(O3) network of a thick SiOx<2 film, thereby transforming what is normally a hydrophilic surface into one that is hydrophobic.