Observation of a new Al(111)/Si(111) orientational epitaxy
1990; American Institute of Physics; Volume: 67; Issue: 2 Linguagem: Inglês
10.1063/1.345734
ISSN1520-8850
AutoresA. S. Yapsir, C. H. Choi, Tianlin Lu,
Tópico(s)X-ray Diffraction in Crystallography
ResumoA new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.
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