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The influence of the reverse Early effect on the performance of bandgap references

1996; Institute of Electrical and Electronics Engineers; Volume: 43; Issue: 5 Linguagem: Inglês

10.1109/81.502214

ISSN

1558-1268

Autores

A. vanStaveren, C.J.M. Verhoeven, A.H.M. vanRoermund,

Tópico(s)

Silicon Carbide Semiconductor Technologies

Resumo

In the literature three key-parameters are commonly used for the design of bipolar bandgap references: E G (bandgap energy), I S (saturation current) and X TI (exponent of the temperature behavior of I S ). This paper shows that four key parameters exist: these three and V AR ,the reverse Early voltage. This parameter models the influence of the base-width modulation at the base-emitter junction on the collector current. A general expression for the error in the output voltage caused by the reverse Early effect is derived and a comparison is made with other errors.

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