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Theory of Relation between Hole Concentration and Characteristics of Germanium Point Contacts

1950; Institute of Electrical and Electronics Engineers; Volume: 29; Issue: 4 Linguagem: Inglês

10.1002/j.1538-7305.1950.tb03649.x

2376-7154

J. Bardeen,

Semiconductor materials and interfaces

The theory of the relation between the current-voltage characteristic of a metal-point contact to n-type germanium and the concentration of holes in the vicinity of the contact is discussed. It is supposed that the hole concentration has been changed from the value corresponding to thermal equilibrium by hole injection from a neighboring contact (as in the transistor), by absorption of light or by application of a magnetic field (Suhl effect). The method of calculation is based on treating separately the characteristics of the barrier layer of the contact and the flow of holes in the body of the germanium. A linear relation between the low-voltage conductance of the contact and the hole concentration is derived and compared with data of Pearson and Suhl. Under conditions of no current flow the contact floats at a potential which bears a simple relation, previously found empirically, with the conductance. When a large reverse voltage is applied the current flow is linearly related to the hole concentration, as has been shown empirically by Haynes. The intrinsic current multiplication factor, α, of the contact can be derived from a knowledge of this relation.