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Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides

2000; American Institute of Physics; Volume: 76; Issue: 16 Linguagem: Inglês

10.1063/1.126319

1520-8842

Qin Wang, Noel A. Clark, Ivan Maximov, P. Omling, Lars Samuelson, W. Seifert, Wei-Dong Sheng, Ivan Shorubalko, H. Q. Xu,

Semiconductor Quantum Structures and Devices

We have measured at low temperatures the conductance of electron waveguides fabricated from modulation-doped quantum wells by wet etching and regrowth. We have found that, for a waveguide with abruptly changed geometry at the entrance and exit, the conductance shows oscillations, which are superimposed on a conventional conductance plateau structure. The periods and amplitudes of conductance oscillations depend on the length to width aspect ratio of the waveguide. In addition, the amplitudes of conductance oscillations decrease with increasing temperature. We propose that the observed oscillations are caused by the formation of longitudinal resonant electron states in the waveguide, in analogy with optical Fabry–Perot effects.