Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts
1990; Elsevier BV; Volume: 103; Issue: 1-4 Linguagem: Inglês
10.1016/0022-0248(90)90194-p
ISSN1873-5002
AutoresKenji Shiojima, Tsugunori Okumura,
Tópico(s)Advanced Energy Technologies and Civil Engineering Innovations
ResumoScanning internal-photoemission microscopy has been applied to the evaluation of the effect of damage on electrical properties of Schottky contacts on GaAs. The photoyield in the damaged regions increased for n-GaAs and decreased for p-GaAs, whether the damage was a mechanical one or an implantation-induced one. The advantage of this technique has been demonstrated by (a) visualization of the damage effect in a single Schottky contact and (b) detection of an implantation-induced damage at a dose as low as 4 × 1010 cm-2.
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