Smooth and high-rate reactive ion etching of diamond
2002; Elsevier BV; Volume: 11; Issue: 3-6 Linguagem: Inglês
10.1016/s0925-9635(01)00617-3
ISSN1879-0062
AutoresYukio Ando, Yoshiki Nishibayashi, Koji Kobashi, Takashi Hirao, Kenjiro Oura,
Tópico(s)Semiconductor materials and devices
ResumoDiamond surfaces with patterned Al masks were etched by a reactive ion etching (RIE) system under conditions that the RF power was 100–280 W, the CF4/O2 ratio was 0–12.5% and the gas pressure 2–40 Pa. It was found that the roughness of the etched diamond surface decreased with an increase in the CF4/O2 ratio, although this reduced the selective etching ratio of diamond against Al. The gas pressure also affected the surface roughness and the etching anisotropy. The etching rate of diamond considerably increased upon a small addition of CF4 in O2. Based on these results, we were successful in an anisotropic etching of diamond at a very high rate (∼9.5 μm/h) with a smooth etched surface (Ra<0.4 nm), a high selective etching ratio of diamond vs. Al, and a high aspect ratio (the height/diameter was ∼8 for array structures and ∼25 for exceptional cases) by choosing appropriate etching conditions.
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