Remote microwave plasma-enhanced chemical vapor deposition of amorphous carbon on silicon and titanium alloy substrates
1996; Elsevier BV; Volume: 80; Issue: 1-2 Linguagem: Inglês
10.1016/0257-8972(95)02699-1
ISSN1879-3347
AutoresC. Tixier, Pascal Tristant, J. Desmaison, René Ranc,
Tópico(s)Copper Interconnects and Reliability
ResumoAmorphous carbon films (a-CH) were grown by remote microwave plasma-enhanced chemical vapor deposition (RMPECVD) on silicon wafers and TA6V (Ti-6% wt. Al-4% wt. V) substrates. In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected into the afterglow. The substrates, placed in the afterglow, are radio-frequency (r.f.) biased to increase the film characteristics. The films were analyzed by electron recoil detection analysis (ERDA), IR and Raman spectroscopy, SIMS, AES and XPS. Under typical conditions the films contained 18 at.% H. The refractive index ranged from 1.6 to 2.0. Critical loads, obtained by scratch-test, had values up to 30 N depending on process conditions and on the presence or not of an underlayer. The influence of a few parameters was studied: H2 content of the plasma, microwave power and r.f. bias voltage. In contrast to silicon substrates, the deposition of adherent films on TA6V is a problem. It necessitates the deposition of an underlayer because direct deposition results in sinusoidal wrinkles appearing in the films. In order to gain a better understanding of this problem, a physico-chemical characterization of the interface has been conducted.
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