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High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

2008; American Institute of Physics; Volume: 93; Issue: 5 Linguagem: Inglês

10.1063/1.2962985

1520-8842

Jaechul Park, Sang‐Wook Kim, Changjung Kim, Sunil Kim, Ihun Song, Huaxiang Yin, Kyoung-Kok Kim, Sunghoon Lee, Ki‐Ha Hong, Jae-Cheol Lee, Jaekwan Jung, Eunha Lee, Kee-Won Kwon, Youngsoo Park,

Electrical and Thermal Properties of Materials

Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2∕Vs, a threshold voltage of 0.1V, a subthreshold swing of 0.25V/decade, and an Ion∕off ratio of 7.