A novel yellow phosphor for white light emitting diodes
2010; IOP Publishing; Volume: 19; Issue: 1 Linguagem: Inglês
10.1088/1674-1056/19/1/017801
ISSN2058-3834
AutoresWang Zhi-jun, Li Panlai, Yang Zhiping, Qinglin Guo, Xu Li,
Tópico(s)GaN-based semiconductor devices and materials
ResumoThis paper reports that a novel yellow phosphor, LiSrBO3:Eu2+, was synthesized by the solid-state reaction. The excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet (360 and 400 nm) and blue (425 and 460 nm) light, and exhibits a satisfactory yellow performance (565 nm). The role of concentration of Eu2+ on the emission intensity in LiSrBO3 is studied, and it is found that the critical concentration is 3 mol%, and the concentration self-quenching mechanism is the dipole–dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip (460 nm or 400 nm) with LiSrBO3:Eu2+ phosphor, the CIE chromaticity is (x = 0.341, y = 0.321) and (x = 0.324, y = 0.318), respectively. Therefore, LiSrBO3:Eu2+ is a promising yellow phosphor for white light emitting diodes.
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