Investigation of the electrical properties of Cd-doped indium selenide
1991; American Institute of Physics; Volume: 70; Issue: 11 Linguagem: Inglês
10.1063/1.349807
ISSN1520-8850
AutoresG. Micocci, M. Molendini, A. Tepore, R. Rella, Pietro Siciliano,
Tópico(s)Solid-state spectroscopy and crystallography
ResumoResistivity, Hall-effect, and deep-level transient spectroscopy measurements have been performed on Cd-doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of the hole mobility can be explained by combining the optical phonon and the ionized impurity scatterings. Two hole-trapping levels have been detected at 0.42 and 0.48 eV above the valence band with a capture cross section of about 10−17 cm2. Finally, we have found the latter trap to be a deep acceptor level, which is very probably associated with defects or defect complexes formed by the dopant atoms.
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