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Photoluminescence from Si nanocrystals exposed to a hydrogen plasma

2008; American Institute of Physics; Volume: 104; Issue: 8 Linguagem: Inglês

10.1063/1.3002913

1520-8850

Yoon-Jin Jung, Jong‐Hwan Yoon, R. G. Elliman, A.R. Wilkinson,

Thin-Film Transistor Technologies

Si nanocrystals embedded in SiO2 films were exposed to an atomic H plasma at different temperatures. Photoluminescence intensity from the nanocrystals increases with increasing exposure time, followed by saturation that depends on the exposure temperature. The saturation level depends on the final exposure temperature and shows no dependence on the thermal history of exposure. This behavior is shown to be consistent with a model in which the steady-state passivation level is determined by a balance between defect passivation and depassivation by H, with the activation energy for the passivation reaction being larger than that for the depassivation reaction.