Artigo Revisado por pares

Properties of schottky barrier diodes and ohmic contacts on znte single crystal

1978; Wiley; Volume: 98; Issue: 6 Linguagem: Inglês

10.1002/eej.4390980601

ISSN

1520-6416

Autores

Manabu Saji, K. Matsumoto, Hiroshi Fujimoto,

Tópico(s)

Semiconductor Quantum Structures and Devices

Resumo

Electrical Engineering in JapanVolume 98, Issue 6 p. 1-9 Article Properties of schottky barrier diodes and ohmic contacts on znte single crystal Manabu Saji, Manabu Saji Nagoya Institute of Technology, Nagoya, JapanSearch for more papers by this authorKunio Matsumoto, Kunio Matsumoto Nagoya Institute of Technology, Nagoya, JapanSearch for more papers by this authorHiroshi Fujimoto, Hiroshi Fujimoto Daido Institute of Technology, Nagoya, JapanSearch for more papers by this author Manabu Saji, Manabu Saji Nagoya Institute of Technology, Nagoya, JapanSearch for more papers by this authorKunio Matsumoto, Kunio Matsumoto Nagoya Institute of Technology, Nagoya, JapanSearch for more papers by this authorHiroshi Fujimoto, Hiroshi Fujimoto Daido Institute of Technology, Nagoya, JapanSearch for more papers by this author First published: 1978 https://doi.org/10.1002/eej.4390980601Citations: 4AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, p. 304, Academic Press, 1972. 2 F. A. Kroger and K. DeNobel, U.S. Patent 2865, 1958. 3 M. Aven and B. Segall, Phys. Rev., Vol. 130, 81, 1963. 4 M. G. Miksic, et al, Phys. Lett., Vol. 11, 202, 1964. 5 N. Watanabe, S. Usui and Y. Kanai, Japan J. Appl. Phys., Vol. 3, 427, 1964. 6 B. L. Crowder and W. N. Hammer, Phys. Rev., Vol. 150, 541, 1966. 7 M. Aven and W. Garwachi, J. Electrochem. Soc., Vol. 114, 1063, 1967. 8 K. Takahashi, W. D. Baker and A. G. Milnes, Int. J. Electron., Vol. 27, 4383, 1969. 9 W. D. Baker and A. G. Milnes, J. Appl. Phys., Vol. 43, 5152, 1972. 10 A. M. Goodman, J. Appl. Phys., Vol. 34, 329, 1963. 11 J. Carides and A. G. Fisher, Solid State Commun., Vol. 2, 217, 1964. 12 R. K. Swank, Phys. Rev., Vol. 153, 844, 1967. 13 H. B. Michaelson, J. Appl. Phys., Vol. 21, 536, 1950. Citing Literature Volume98, Issue61978Pages 1-9 ReferencesRelatedInformation

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