Raman spectra of Al x In1− x As grown by molecular-beam epitaxy
1987; American Institute of Physics; Volume: 62; Issue: 11 Linguagem: Inglês
10.1063/1.339009
ISSN1520-8850
AutoresShūichi Emura, Tsuyoshi Nakagawa, Shun‐ichi Gonda, Saburo Shimizu,
Tópico(s)Quantum and electron transport phenomena
ResumoRaman study of the lattice vibrations of a ternary alloy AlxIn1−xAs on InP substrate over the whole range of compositions is reported. The Raman spectra show a two-mode-type behavior involving AlAs- and InAs-like longitudinal optical-phonon modes. The frequency of the AlAs-like mode strongly depends on the composition, but frequency of the InAs-like mode is almost independent of composition. A disorder-induced scattering by acoustic vibrations is also observed.
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