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Pb(Zr, Ti)O 3 Thin-Film Preparation by Multitarget Magnetron Sputtering

1992; Institute of Physics; Volume: 31; Issue: 9S Linguagem: Inglês

10.1143/jjap.31.3021

1347-4065

Kazuo Hirata, Naokichi Hosokawa, Takashi Hase, Toshiyuki Sakuma, Yoichi Miyasaka,

Microwave Dielectric Ceramics Synthesis

Ferroelectric lead zirconate-titanate (PZT) thin films have been prepared on Pt-coated oxidized Si substrates (Pt/Ti/SiO 2 /Si) utilizing a multitarget magnetron sputtering system with three Pb(Zr 0.5 , Ti 0.5 )O 3 targets and one PbO target. Crystal structure and dielectric properties of the films have been studied as functions of substrate temperature ( T s ) and Pb content. The Pb content in the film has been precisely controlled by optimizing the rf input power for the PbO target ( P PbO ). As a result, single-phase perovskite films have been prepared fairly easily with appropriate combinations of T s and P PbO . A film with atomic ratios of Pb/(Zr+Ti)=1.3 and Zr/(Zr+Ti)=0.5 prepared at T s =600°C exhibited a dielectric constant of 780 and remanent polarization of 19 µC/cm 2 .