Mobility variations in semiconducting Ag2Se layers
1995; Elsevier BV; Volume: 46; Issue: 8-10 Linguagem: Inglês
10.1016/0042-207x(95)00105-0
ISSN1879-2715
Autores Tópico(s)Magnetic properties of thin films
ResumoAlthough, because of some unique properties, e.g. phase transformation at about 133 °C, Ag2Se has attracted great interest during recent decades, the electrical and galvanomagnetic properties of its low-temperature phase have been studied in only a few cases. A recently proposed method of Ag2Se layer preparation in a vacuum system allows us a reproducible preparation of such semiconductor layers. In this method, 0.17-μm-thick Ag2Se layers have been prepared on NaCl and SiOx substrates. Both poly- and monocrystalline layers have been grown and investigated. Structural and galvanomagnetic properties have been studied. The temperature dependence of the resistivity, carrier concentration, and mobility has been measured in the lowtemperature range from 77 K up to temperatures above the phase transformation (i.e. 460 K). Reports in the literature of the galvanomagnetic properties of polycrystalline and monocrystalline Ag2Se layers are compared.
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