Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
2006; Institute of Physics; Volume: 45; Issue: 6S Linguagem: Inglês
10.1143/jjap.45.5485
ISSN1347-4065
AutoresHirofumi Ohnaka, Yoshihiro Kojima, Shigeru Kishimoto, Yutaka Ohno, Takashi Mizutani,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoSingle-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current–voltage (I–V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%.
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