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Absorption bands induced in KBr by H + and H 2 + implantation

1977; IOP Publishing; Volume: 10; Issue: 9 Linguagem: Inglês

10.1088/0022-3719/10/9/024

1747-3802

M. Saidoh, P. D. Townsend,

Diamond and Carbon-based Materials Research

A comparison of H+ and H2+ implantations has been used to change the equilibrium levels of intrinsic defects and thereby test the di-interstitial model of the V4 centre. The H2+ implants enhanced the aggregate defects, V4 and M centres, as was expected in the high-flux conditions obtained along the component ion track. This observation is in accord with the di-interstitial model of the V4 centre. A major change in the F/M ratio was also recorded.