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Research on resonant tunneling by fast neutron irradiation

1990; American Institute of Physics; Volume: 56; Issue: 6 Linguagem: Inglês

10.1063/1.102741

1520-8842

Jian-min Mao, Jing Zhou, Ruijian Zhang, Wei-min Jin, C. L. Bao, Yi Huang,

Semiconductor materials and devices

Resonant tunneling by fast neutron irradiation with doses from 1×1012 to 1×1016 n/cm2 was studied. We observed that peak and valley positions shifted to higher voltages, and peak-to-valley ratios decreased with higher doses in static current-voltage characteristics. Several models which take into account ionized impurities were used to give consistent explanation to such phenomena.