Scanning probe microscopy for silicon device fabrication
2005; Taylor & Francis; Volume: 31; Issue: 6-7 Linguagem: Inglês
10.1080/08927020500035580
ISSN1029-0435
AutoresM. Y. Simmons, F. J. Rueß, Kuan Eng Johnson Goh, Toby Hallam, Steven R. Schofield, L. Oberbeck, Neil J. Curson, A. R. Hamilton, M. J. Butcher, Robert G. Clark, T. C. G. Reusch,
Tópico(s)Force Microscopy Techniques and Applications
ResumoAbstract We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a combination of ultra-high vacuum scanning probe microscopy and silicon molecular beam epitaxy (MBE). In this work we have been able to overcome some of the key fabrication challenges to the realisation of atomic-scale devices including the identification of single P dopants in silicon, the controlled incorporation of P atoms in silicon with atomic precision and the minimisation of P segregation and diffusion during Si encapsulation. Recently, we have combined these results with a novel registration technique to fabricate robust electrical devices in silicon that can be contacted and measured outside the ultra-high vacuum environment. We discuss the importance of our results for the future fabrication of atomic-scale devices in silicon. Keywords: Scanning tunneling microscopyNanoelectronicsSiliconLithography Acknowledgements MYS and RGC acknowledge Australian Government Federation fellowships and LO a Hewlett–Packard fellowship. This work was supported by the Australian Research Council, the Australian Government, the Semiconductor Research Corporation, the US Advanced Research and Development Activity, National Security Agency and Army Research Office under contract DAAD19-01-1-0653.
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