Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
2010; American Institute of Physics; Volume: 96; Issue: 12 Linguagem: Inglês
10.1063/1.3367746
ISSN1520-8842
AutoresSébastien Plissard, Kimberly A. Dick, X. Wallart, Philippe Caroff,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoGrowth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
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