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Gain characteristics of InGaN-GaN quantum wells

2000; IEEE Photonics Society; Volume: 36; Issue: 9 Linguagem: Inglês

10.1109/3.863958

1558-1713

Hongtao Jiang, J. Singh,

Spectroscopy and Laser Applications

A self-consistent approach is used to examine gain and radiative lifetimes in InGaN-GaN quantum-well structures. The effect of high built-in electric fields due to spontaneous polarization and the piezoelectric effect and the screening of these fields by carrier injection is examined. We study how the peak gain and radiative lifetime vary with injection density and well size. We also examine the blue shift in the peak gain energy with carrier injection. Implications for laser design are discussed.