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Silicon field-effect transistor based on quantum tunneling

1994; American Institute of Physics; Volume: 65; Issue: 5 Linguagem: Inglês

10.1063/1.112250

1520-8842

J. R. Tucker, Chinlee Wang, P. Scott Carney,

Nanowire Synthesis and Applications

This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach ∼1000 Å. Control of tunneling appears to be possible at minimum channel lengths L∼250 Å or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.