A two-dimensional modeling of the fine-grained polycrystalline silicon thin-film solar cells
2002; Elsevier BV; Volume: 403-404; Linguagem: Inglês
10.1016/s0040-6090(01)01644-3
ISSN1879-2731
AutoresE. Christoffel, M. Rusu, A. Zerga, S. Bourdais, Sébastien Noël, A. Slaoui,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoA two-dimensional device modeling for polycrystalline silicon thin-film solar cells was performed. A ThRee-dimensional Emitter Based on Locally Enhanced diffusion (TREBLE) concept was applied to evaluate the degree of leveling of the device efficiency. The model assumes a n + -p-p + junction device of a 3-μm grain size and 10-μm-thick polycrystalline Si columnar structure unit, where the n + regions extend along the grain boundaries. The analysis was carried out using ISE-DESSIS, a two-dimensional semiconductor device simulator. It has been found that open circuit voltage could be improved by increasing the base doping level to the optimum value of 10 17 cm 3 . Preferential doping has a beneficial effect on short-circuit current of the cell and a slight influence on open circuit voltage. Conversion efficiency of ∼10% could be expected at the surface, recombination velocity of 10 4 cm/s and dopant diffusion depth along the grain boundary x gb =2.5 μm At base doping ∼ 10 17 cm -3 and well-passivated grain boundaries (S gb =10 3 cm/s), an efficiency of approximately 12% may be obtained when x gb = 3.7 μm.
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