Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
2010; Optica Publishing Group; Volume: 18; Issue: 10 Linguagem: Inglês
10.1364/oe.18.010604
ISSN1094-4087
AutoresKatsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko Arakawa,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoAn electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).
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