Produção Nacional
Sol-gel erbium-doped silica-hafnia planar and channel waveguides
2003; SPIE; Volume: 4990; Linguagem: Inglês
10.1117/12.478340
ISSN1996-756X
AutoresRogéria Rocha Gonçalves, Giovanni Carturan, L. Zampedri, Maurizio Ferrari, Cristina Armellini, Alessandro Chiasera, M. Mattarelli, Enrico Moser, M. Montagna, Giancarlo C. Righini, S. Pelli, Gualtiero Nunzi Conti, Sidney J. L. Ribeiro, Younès Messaddeq, A. Minotti, V. Foglietti, Hervé Portalès,
Tópico(s)Photonic and Optical Devices
ResumoErbium activated SiO 2 -HfO 2 planar waveguides, doped with Er 3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO 2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuous-wave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4 I 13/2 → 4 I 15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4 I 13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1-6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.
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