The morphology and substructure of SiC whisker in SiCw/Al composite
1990; Elsevier BV; Volume: 24; Issue: 4 Linguagem: Inglês
10.1016/0254-0584(90)90098-u
ISSN1879-3312
AutoresC.K. Yao, Lei Cao, Lin Geng, Z.Y. Ma, Shaolong Guo,
Tópico(s)Advanced ceramic materials synthesis
ResumoThe morphology and substructure of SiC whisker in SiCw6061Al composites were observed by a high voltage and high resolution electron microscope. The SiC whisker generally has a hexagonal or triangular cross section and a zigzag surface. Stacking faults parallel to the {111} planes were found in a doublebeam condition. It was considered that the stacking faults were connected with the matrix by the Frank partial dislocations whose Burgers vectors are a[1̄11]/3. The stripes of the stacking faults were straight lines and were parallel to the [1̄10] direction. There were a lot of dislocations in the aluminium matrix near the SiC whiskers. The high density dislocation zones were formed around the whiskers, and the dislocation density was as high as 10 /cm.
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