Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
2011; Elsevier BV; Volume: 350; Issue: 1 Linguagem: Inglês
10.1016/j.jcrysgro.2011.12.027
ISSN1873-5002
AutoresToru Nagashima, Akira Hakomori, Takafumi Shimoda, Keiichiro Hironaka, Y. Kubota, Toru Kinoshita, Reo Yamamoto, Kazuya Takada, Yoshinao Kumagai, Akinori Koukitu, Hiroyuki Yanagi,
Tópico(s)Semiconductor materials and devices
ResumoA novel hybrid seed substrate for preparing a freestanding (0001) AlN substrate was proposed. The seed substrate consists of thin single-crystalline AlN layer and thick poly-crystalline AlN base, which is expected to remove the differences of thermal expansion coefficient and lattice constant between a subsequently grown thick AlN epitaxial layer and the seed substrate. A freestanding AlN substrate (diameter: 20 mm; thickness: 180 μm) was successfully prepared, although the freestanding AlN substrate included a number of inner cracks. The freestanding substrate had no strong specific absorption in the wavelength range 210–1000 nm and showed an absorption number of 52 cm−1 at 265 nm.
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