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Comment on the compositional dependence of bandgap in AlGaAs and band-edge discontinuities in AlGaAs-GaAs heterostructures

1992; IOP Publishing; Volume: 7; Issue: 8 Linguagem: Inglês

10.1088/0268-1242/7/8/015

1361-6641

Stephen Giugni, T.L. Tansley,

Semiconductor materials and interfaces

A range of values exists in the literature for compositional dependence of bandgap in AlxGa1-xAs below the direct-indirect alloy composition and the way this is apportioned between the conduction and valence band edges. The authors compare results obtained from studies of compositionally graded quantum-well structures with consensus values and find that a self-consistent picture emerges only if a larger bandgap dependence than is still widely quoted in the literature is used. The preferred relation for bandgap dependence is Delta Eg(x)=1.427x+0.041x2 (eV) with a conduction-to-valence band split ratio of about 60:40, yielding Delta Ec=0.88x and Delta Ev=0.55x.