Low-temperature in situ preparation of ferroelectric Pb(Zr0.55Ti0.45)O3 thin films by reactive sputtering
1993; American Institute of Physics; Volume: 63; Issue: 17 Linguagem: Inglês
10.1063/1.110521
ISSN1520-8842
AutoresXingjiao Li, Jianshe Liu, Yike Zeng, Junwen Liang,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoFerroelectric thin films with a composition Pb(Zr0.55Ti0.45)O3 have been prepared on Pt-coated Si substrates by a reactive sputtering technique at substrate temperatures as low as 250 °C. By means of x-ray diffraction, titanium zirconium oxide was identified as one of the reaction products. Based on this fact, a possible Pb(Zr,Ti)O3 formation mechanism has been proposed. X-ray diffraction patterns of these films show nearly no pyrochlore phase. Ferroelectric hysteresis loops show a remanent polarization of 25.6 μC/cm2 and a coercive field of 17.1 kV/cm.
Referência(s)