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Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system

1976; American Institute of Physics; Volume: 29; Issue: 9 Linguagem: Inglês

10.1063/1.89156

1520-8842

R. Pretoriüs, Z. L. Liau, S.S. Lau, M−A. Nicolet,

Thin-Film Transistor Technologies

Solid-phase epitaxial growth (SPEG) of silicon was investigated by a tracer technique using radioactive 31Si formed by neutron activation in a nuclear reactor. After depositing Pd and Si onto activated single-crystal silicon substrates, Pd2Si was formed with about equal amounts of radioactive and nonradioactive Si during heating at 400 °C for 5 min. After an 1-sec annealing stage (450→500 °C in 1 h) this silicide layer, which moves to the top of the sample during SPEG, is etched off with aqua regia. From the absence of radioactive 31Si in the etch, it is concluded that SPEG takes place by a dissociation mechanism rather than by diffusion.