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Solar-Blind Photodetectors for Harsh Electronics

2013; Nature Portfolio; Volume: 3; Issue: 1 Linguagem: Inglês

10.1038/srep02628

2045-2322

Dung‐Sheng Tsai, Wei-Cheng Lien, Der‐Hsien Lien, Kuan-Ming Chen, Meng‐Lin Tsai, Debbie G. Senesky, Yueh‐Chung Yu, Albert P. Pisano, Jr‐Hau He,

Nanowire Synthesis and Applications

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.