Structure and Composition of Sputtered Tantalum Thin Films on Silicon Studied by Nuclear and X-Ray Analysis
1972; American Institute of Physics; Volume: 43; Issue: 4 Linguagem: Inglês
10.1063/1.1661339
ISSN1520-8850
Autores Tópico(s)Semiconductor materials and devices
ResumoMicroanalysis by direct observation of nuclear reactions and by backscattering of He4+ ions was used to determine the composition of sputtered Ta films on silicon. Oxygen and nitrogen concentration as low as 0.3 and 0.1%, respectively, were found for bcc and β-Ta structures. At a low deposit rate, oxygen incorporation in β-Ta structure up to about 20% was observed and correlated to a resistivity increase. The Ar/Ta ratio varies between 1.5 and 3% with increasing sputtering power.
Referência(s)