Photoactivated birefringence in antiferroelectric thin films via a structural transition
1994; American Institute of Physics; Volume: 65; Issue: 20 Linguagem: Inglês
10.1063/1.112618
ISSN1520-8842
AutoresFeiling Wang, Kewen K. Li, Gene H. Haertling,
Tópico(s)Photorefractive and Nonlinear Optics
ResumoA photoactivated birefringence has been observed in an antiferroelectric lead zirconate titanate (PZT) thin film material bounded by an indium-tin oxide (ITO) electrode. This phenomenon stemmed from the ultraviolet (UV) assistance to an antiferroelectric-to-ferroelectric structural transition which otherwise was inhibited by an effect of the lead zirconate titanate (PZT)-ITO interface. The UV-assisted structural transition was accompanied by a significant change in the birefringence of the PZT thin films. Using this phenomenon, an UV-addressed visible-light modulation was demonstrated with an ITO/PZT/Pt thin film structure on silicon substrates.
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