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Shallow Sip+‐njunctions fabricated by focused ion beam Ga+implantation through thin Ti and TiSi2layers

1993; American Institute of Physics; Volume: 74; Issue: 4 Linguagem: Inglês

10.1063/1.354717

1520-8850

H. C. Mogul, A. J. Steckl, Steven W. Novak,

Semiconductor materials and devices

Focused ion beam Ga+ implantation through Ti metal (ITM) and TiSi2 (ITS) layers, followed by rapid thermal annealing (RTA), has been investigated for application in self-aligned silicide technology. The Ga+ energy was varied from 25 to 50 keV at doses of 1×1013 and 1×1015 cm−2 followed by RTA at 600 °C for 30 s. Depth profiles of the Ga implants were obtained by performing secondary-ion mass spectrometry. It was observed that higher-energy and higher-dose implants yielded good quality p+-n junction characteristics. Diodes were fabricated to obtain the electrical properties of these silicided junctions. At higher implant energies (≥40 keV) and all doses, I-V characteristics of ITS diodes showed 100 times lower leakage currents (Ir) than ITM diodes. For low-energy (<40 keV)/high-dose implantation the ITS diodes showed a slight improvement in Ir over the ITM diodes, whereas for low-energy/low-dose implantation the same Ir was observed.