Hall effect of 1T-TaS2 and 1T-TaSe2
1980; Elsevier BV; Volume: 99; Issue: 1-4 Linguagem: Inglês
10.1016/0378-4363(80)90230-2
ISSN1873-2127
AutoresRumiko Inada, Yoshichika Ōnuki, Sei‐ichi Tanuma,
Tópico(s)Molecular Junctions and Nanostructures
ResumoThe Hall coefficients of 1T-TaS2 and 1T-TaSe2 single crystals were measured from 360 K to 1.4 K. An abrupt change of the sign and a hysteresis were observed in the Hall coefficient of 1T-TaS2 at the nearly commensurate-commensurate phase transition temperature, ca. 200 K; above this temperature the major carrier was n-type, and below, p-type. On the other hand, the sign of Hall coefficient of 1T-TaSe2 was positive in the whole temperature range measured.
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