GaAs under Intense Ultrafast Excitation: Response of the Dielectric Function
1998; American Physical Society; Volume: 80; Issue: 1 Linguagem: Inglês
10.1103/physrevlett.80.185
ISSN1092-0145
AutoresHuang Li, John P. Callan, Eli N. Glezer, Eric Mazur,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoWe used a new broadband spectroscopic technique to measure the dielectric function of GaAs over the spectral range of 1.5--3.5 eV following intense 70-fs laser excitation. The results provide the most detailed information thus far on the electron and lattice dynamics both above and below the fluence threshold for permanent damage, ${F}_{\mathrm{th}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1.0\phantom{\rule{0ex}{0ex}}\mathrm{kJ}/{\mathrm{m}}^{2}$. There are three distinct regimes of behavior: lattice heating $(<{0.5F}_{\mathrm{th}})$, lattice disordering (0.6--0.8) ${F}_{\mathrm{th}}$, and a semiconductor-to-metal transition $(>{0.8F}_{\mathrm{th}})$. Below ${F}_{\mathrm{th}}$, the changes are completely reversible.
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