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Improved Bipolar Resistive Switching of HfO x /TiN Stack with a Reactive Metal Layer and Post Metal Annealing

2010; Institute of Physics; Volume: 49; Issue: 4S Linguagem: Inglês

10.1143/jjap.49.04dd18

1347-4065

Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Frederick Chen, Ming‐Jinn Tsai,

Electronic and Structural Properties of Oxides

Improvement of a reactive metal layer (AlCu, Ti, or Ta) for the bipolar resistance switching (BRS) performance of HfO x based resistive memory (RM) with TiN as electrodes are studied in this work. After appropriate post metal annealing (PMA), the reactive metal layer with high oxygen content serves as an embedded resistor and modifies the insulator properties of theses stacked layers, which show stable repetitive switching through by the migration of oxygen ions in HfO x layer during operation. The Gibbs free energy for the oxidation of the reactive metal with respect to that of HfO 2 dominates the optimal PMA temperature for the devices with stable BRS. Except for the reduction of forming voltage and leakage current, the AlCu layer with high resistance after PMA of 500 °C is beneficial for the devices with successive BRS and on/off ratio of 4. The forming voltage of the Ti devices seems insensitive on the PMA. Compared with the Ta device, the Ti/HfO x RM device after the PMA of 450 °C for 5 min exhibits a different current–voltage behavior during the first RESET voltage sweep and a higher resistance ratio (>40). These results are attributed to the higher affinity of oxygen in the Ti capping layer. The combination of HfO x with a reactive metal and an enough PMA shows great potential for future nonvolatile memory application.