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A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV

1989; Elsevier BV; Volume: 39; Issue: 1-4 Linguagem: Inglês

10.1016/0168-583x(89)90774-x

1872-9584

C.J. Griffin, John A. Kilner, R.J. Chater, A. E. Staton-Bevan, K.J. Reeson, P.L.F. Hemment, J.R. Davis,

Integrated Circuits and Semiconductor Failure Analysis

The formation and structure of buried SiO2 layers formed by oxygen ion implantation into silicon at 150 keV have been studied by cross-sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS). The implanted oxygen dose was increased from 0.1 to 0.65 × 1018 O+/cm2 and the wafers were annealed for 5 hours at 1300° C. A dose of 0.45 × 1018 O+/cm2 was needed to produce a continuous buried oxide layer after annealing, even though a buried layer was not present in the as-implanted material. At this dose, no overlayer threading dislocations were visible by XTEM although small twins and stacking faults were present near the upper Si/SiO2 interface. The type of defect being formed was found to depend on the morphology of the growing interface.