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Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

2013; Volume: 31; Issue: 2 Linguagem: Inglês

10.1116/1.4795210

2166-2754

Ya-Shi Hwang, Lu Liu, F. Ren, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Е. А. Кожухова, N. G. Kolin, V. M. Boĭko, S. S. Vereyovkin, V. S. Ermakov, Chien-Fong Lo, Oleg Laboutin, Yu Cao, J. W. Johnson, Н. И. Каргин, Р. В. Рыжук, S. J. Pearton,

Ga2O3 and related materials

AlGaN/AlN/GaN/sapphire, AlGaN/GaN/sapphire, AlGaN/GaN/Si, and InAlN/GaN/sapphire heterojunctions (HJs) were irradiated with 10 MeV electrons to fluences of 2 × 1015 to 3.3 × 1016 cm−2. The main effects on the electrical properties were a decrease in two-dimensional electron gas (2DEG) mobility and the shift of capacitance–voltage (C-V) characteristics to more positive values. The 50% 2DEG mobility decrease occurred at a similar fluence of 3.3 × 1016 cm−2 for all AlGaN/GaN and AlGaN/AlN/GaN HJs, but at a much lower fluence of 1.3 × 1016 cm−2 for InAlN/GaN, which is in line with previous observations for neutron irradiated HJs. The shift of C-V characteristics is due to increased concentration of deep acceptor traps in the barrier/interface region. In AlGaN/GaN/Si transistors, the increase of concentration of deep barrier/interface traps with activation energy of 0.3, 0.55, and 0.8 eV was observed. This increase correlates with the observed degradation of gate lag characteristics of transistors after irradiation with 1.3 × 1016 cm−2 electrons.