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Comparison of device performance and scaling capability of thin-body GOI and SOI MOSFETs

2005; IOP Publishing; Volume: 20; Issue: 10 Linguagem: Inglês

10.1088/0268-1242/20/10/009

1361-6641

Xia An, Ru Huang, Xing Zhang, Yangyuan Wang,

Integrated Circuits and Semiconductor Failure Analysis

The scaling capability of germanium-on-insulator (GOI) and silicon-on-insulator (SOI) is investigated in this paper. The results show that GOI devices can provide higher drive current than SOI at the same off-state leakage current. Thin-body GOI devices have the advantages of thin-body structures and the off-state leakage current of GOI is comparable with SOI, even lower than SOI. Furthermore, GOI can greatly relax the stringent requirement of the body thickness by ~127% and ~84% for low operating power (LOP) and high-performance logic (HP) applications, respectively, for 50 nm gate length, and ~180% and ~130% for 20 nm gate length, respectively. The results indicate that GOI is superior to SOI and shows strong scaling capability for both HP and LOP applications. However, compared with SOI, the intrinsic delay of GOI is comparable with SOI due to the large gate capacitance. GOI does not show greater advantages over SOI with ac considerations.