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Hydrogen implantation into (100) silicon: A study of the released damage

1989; Elsevier BV; Volume: 39; Issue: 1-4 Linguagem: Inglês

10.1016/0168-583x(89)90808-2

1872-9584

L. Meda, G. F. Cerofolini, Rudi Dierckx, Giuseppe Mercurio, M. Servidori, F. Cembali, M. Anderle, R. Canteri, G. Ottaviani, C. Claeys, Jan Vanhellemont,

Semiconductor materials and devices

Abstract H+2 was chosen to study the radiation damage in bare (100) silicon, after ion implantation at different fluences and energies. Moreover, chemical species, self-interstitials, disorder and strain were checked by the common techniques used to characterize a damaged crystal. The implantation conditions were chosen to produce a damage essentially due to Frenkel pairs. Damage release resulted in a substantially linear phenomenon: sputtering effects, heavy change in electronic stopping power, heavy self-interstitial migration and amorphization of the matrix did not occur with increasing fluence. For this, a binary collision model could be able to describe with a certain accuracy the damage release; we used MARLOWE as calculation code and compared theoretical results with the experimental ones. Strain and disorder due to the presence of hydrogen in the crystal were put in evidence by double crystal XRD measurements; displaced atoms were checked by Rutherford backscattering channeling spectra. TEM micrographs of cross-sectioned samples put in evidence a high contrast damaged region and HREM observations evidentiate the presence of (100)-oriented platelets.