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XPS Study on a‐GeO x (1.3 < x < 2) Films Prepared from GeO 2

1985; Wiley; Volume: 130; Issue: 2 Linguagem: Inglês

10.1002/pssb.2221300204

1521-3951

Yoshiki Takano, Y. Tandoh, H. Ozaki, Naoko Mori,

ZnO doping and properties

Abstract An XPS study is made on a‐GeO x films prepared by deoxidizing GeO 2 in Ar—H plasma. The XPS spectra of Ge 3d electrons are decomposed to five components, whose chemical shifts are estimated by taking into account the remote inductive effect and using the modified Sanderson method. The results are well explained by the model for the atomic configuration in the region of 1.3 < < x < 2.