Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content
1999; Wiley; Volume: 176; Issue: 1 Linguagem: Inglês
10.1002/(sici)1521-396x(199911)176
ISSN1521-396X
AutoresAyumu Tsujimura, Akihiro Ishibashi, Yukio Hasegawa, Satoshi Kamiyama, I. Kidoguchi, Nobuyuki Otsuka, Ryouko Miyanaga, Gaku Sugahara, Masato Suzuki, M. Kume, Kenji Harafuji, Yuzaburoh Ban,
Tópico(s)Nanowire Synthesis and Applications
ResumoThe indium content of GaInN/GaN multiple quantum well (MQW) laser diodes (LDs) was optimized by means of measurements of amplified spontaneous emission (ASE) spectrum and threshold current density. The dependence of ASE spectra on x in Ga1—xInxN (x = 0.07 to 0.11) MQW LDs suggested that low indium content led to small band-gap inhomogeneity. The threshold current density of the LDs decreased with decreasing indium content. Ga0.93In0.07N/GaN MQW LDs were operated with a threshold current density of 11 kA/cm2 under CW condition at room temperature. It is necessary for GaN-based 400 nm band LDs to suppress the band-gap inhomogeneity in the GaInN MQW by optimizing the indium content.
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