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Excited-state dynamics of Yb2+ in LiCaAlF6 single crystal

2004; Elsevier BV; Volume: 38; Issue: 4-6 Linguagem: Inglês

10.1016/j.radmeas.2003.12.003

1879-0925

Amina Bensalah‐Ledoux, M. Nikl, E. Mihóková, N. Solovieva, A. Vedda, Hiroki Sato, T. Fukuda, G. Boulon,

Ga2O3 and related materials

Single crystals of Yb2+-doped LiCaAlF6 were grown by the Czochralski technique under CF4 atmosphere. Photoluminescence, thermally stimulated luminescence and decay kinetics of Yb2+ centre in the LiCaAlF6 host were measured in the 4–300K temperature interval. Phenomenological two excited-state-level model is introduced to obtain quantitative characteristics of the excited state dynamics of Yb2+. The role of Yb2+ centre in trapping processes is discussed. Moreover, defect centres related to LiCaAlF6 host were found.