
Effect of oxygen concentration and system geometry on the current–voltage relations during reactive sputter deposition of titanium dioxide thin films
2011; Elsevier BV; Volume: 85; Issue: 11 Linguagem: Inglês
10.1016/j.vacuum.2011.03.015
ISSN1879-2715
AutoresJulio César Sagás, Diego Alexandre Duarte, Sara Fernanda Fissmer,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoCurrent–voltage relations at different magnetron sputtering systems and gas mixtures were studied during reactive sputter deposition of titanium dioxide thin films. The main goal of this work was to investigate the influence of reactive gas mixture (Ar + O2) and system geometry on the electrical characteristics of the discharge. The geometries utilized were the conventional magnetron sputtering, hollow cathode magnetron sputtering and triode magnetron sputtering. A change in the system geometry leads to a change in the electric field distribution, which alters the working range of the discharge voltage and magnetron efficiency. It is noticed that the discharge voltage at constant current can be reduced when the geometry is altered from conventional magnetron to hollow cathode magnetron or triode magnetron, at the same time the magnetron efficiency is increased when hollow cathode magnetron or triode magnetron are used instead of conventional magnetron sputtering.
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