Portal de Periódicos da CAPES

APSFET: a new, porous silicon-based gas sensing device

2003; Elsevier BV; Volume: 93; Issue: 1-3 Linguagem: Inglês

10.1016/s0925-4005(03)00234-x

1873-3077

Giuseppe Barillaro, A. Nannini, Francesco Pieri,

Gas Sensing Nanomaterials and Sensors

In this paper, a new sensing device based on a FET structure having a PoSi layer as sensing material, namely adsorption porous silicon-based FET (APSFET), is proposed. The sensing mechanism is based on an gas-induced conduction channel in the crystalline silicon under the sensing layer, a new approach with respect to previously reported PoSi sensors. The fabrication process is based on a standard silicon process. In this work, the fabrication process along with an electrical characterization of the device in presence of different organic vapors (alcohols and acids) is presented and discussed.