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Opportunities for Plasma-Assisted Atomic Layer Deposition

2007; Institute of Physics; Volume: 3; Issue: 15 Linguagem: Inglês

10.1149/1.2721487

2151-2051

Erwin Kessels, S. B. S. Heil, E. Langereis, Hans van Hemmen, Harm C. M. Knoops, W. Keuning, M. C. M. van de Sanden,

Electronic and Structural Properties of Oxides

Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasma-produced species. The application of such a low- temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasma-assisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.